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| 2N6660, VQ1004J/P Vishay Siliconix N-Channel 60-V (D-S) Single and Quad MOSFETs PRODUCT SUMMARY Part Number 2N6660 VQ1004J/P V(BR)DSS Min (V) 60 rDS(on) Max (W) 3 @ VGS = 10 V 3.5 @ VGS = 10 V VGS(th) (V) 0.8 to 2 0.8 to 2.5 ID (A) 1.1 0.46 FEATURES D D D D D Low On-Resistance: 1.3 W Low Threshold: 1.7 V Low Input Capacitance: 35 pF Fast Switching Speed: 8 ns Low Input and Output Leakage BENEFITS D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage APPLICATIONS D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays Dual-In-Line TO-205AD (TO-39) N S 1 2N6660 "S" fllxxyy 2 G 3 D "S" = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code N Device Marking Side View D1 S1 G1 NC G2 S2 D2 D4 S4 G4 NC G3 S3 D3 N N Device Marking Top View VQ1004J "S" fllxxyy 1 2 3 4 5 6 7 14 13 12 11 10 9 8 VQ1004P "S" fllxxyy "S" = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code Top View 2N6660 Top View Plastic: VQ1004J Sidebraze: VQ1004P ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Single Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambientb TC= 25_C TC= 100_C TC= 25_C TC= 100_C Total Quad VQ1004J/P Unit V Symbol VDS VGS ID IDM PD RthJA RthJC TJ, Tstg 2N6660 60 "20 1.1 0.8 3 6.25 2.5 170 20 VQ1004J 60 "30 0.46 0.26 2 1.3 0.52 0.96 VQ1004P 60 "20 "0.46 0.26 2 1.3 0.52 0.96 A 2 0.8 62.5 W _C/W _ _C Thermal Resistance, Junction-to-Case Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. b. This parameter not registered with JEDEC. Document Number: 70222 S-04379--Rev. E, 16-Jul-01 -55 to 150 www.vishay.com 11-1 2N6660, VQ1004J/P Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N6660 VQ1004J/P Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Symbol Test Conditions Typa Min Max Min Max Unit V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 10 mA VDS = VGS, ID = 1 mA VDS = 0 V, VGS = "15 V TC = 125_C VDS = 60 V, VGS = 0 V VDS = 35 V, VGS = 0 V 75 1.7 60 0.8 2 "100 "500 10 60 V 0.8 2.5 "100 "500 nA Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V IDSS TC = 125_C VDS = 28 V, VGS = 0 V TC = 125_C 500 1 500 mA m On-State Drain Currentb ID(on) VDS = 10 V, VGS = 10 V VGS = 5 V, ID = 0.3 Ad 3 2 1.3 2.4 350 1 0.8 1.5 5 3 4.2 170 1.5 5 3.5 4.9 170 A Drain-Source On-Resistanceb rDS(on) VGS = 10 V, ID = 1 A TC = 125_Cd W Forward Transconductanceb Common Source Output Conductanceb Diode Forward Voltage gfs gos VSD VDS = 10 V, ID = 0.5 A VDS = 10 V, ID = 0.1 A IS = 0.99 A, VGS = 0 V mS V Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain-Source Capacitance Ciss Coss Crss Cds VDS = 24 V, VGS = 0 V f = 1 MHz 35 25 7 30 50 40 10 40 60 50 10 pF Switchingc Turn-On Time Turn-Off Time tON tOFF VDD = 25 V, RL = 23 W ID ^ 1 A, VGEN = 10 V RG = 25 W 8 8.5 10 10 10 ns 10 VNDQ06 Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v80 ms duty cycle v1%. c. Switching time is essentially independent of operating temperature. d. This parameter not registered with JEDEC on 2N6660. www.vishay.com 11-2 Document Number: 70222 S-04379--Rev. E, 16-Jul-01 2N6660, VQ1004J/P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics 2.0 VGS = 10 V 1.6 ID - Drain Current (A) 8V 7V 6V 1.2 5V 0.8 4V 0.4 3V 2V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 0 0 0.4 0.8 1.2 1.6 2.0 VDS - Drain-to-Source Voltage (V) ID - Drain Current (mA) 80 2.6 V 60 100 Output Characteristics for Low Gate Drive VGS = 10 V 2.8 V 40 2.4 V 2.2 V 20 2.0 V 1.8 V Transfer Characteristics 1.0 TJ = -55_C 0.8 ID - Drain Current (A) VDS = 15 V 125_C 0.6 25_C 2.4 rDS(on) - On-Resistance ( ) 2.0 1.6 1.2 0.8 0.4 0 0 2 4 6 8 10 VGS - Gate-Source Voltage (V) 0 0 2.8 On-Resistance vs. Gate-to-Source Voltage 1.0 A 0.5 A 0.4 ID = 0.1 A 0.2 4 8 12 16 20 VGS - Gate-Source Voltage (V) On-Resistance vs. Drain Current 2.5 rDS(on) - Drain-Source On-Resistance ( ) (Normalized) rDS(on) - Drain-Source On-Resistance ( ) 2.25 Normalized On-Resistance vs. Junction Temperature VGS = 10 V 2.00 I D = 1.0 A 1.75 0.2 A 1.50 1.25 1.00 0.75 0.50 2.0 1.5 VGS = 10 V 1.0 0.5 0 0 0.4 0.8 1.2 1.6 2.0 -50 -10 30 70 110 150 ID - Drain Current (A) TJ - Junction Temperature (_C) Document Number: 70222 S-04379--Rev. E, 16-Jul-01 www.vishay.com 11-3 2N6660, VQ1004J/P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region 10 VDS = 5 V 100 TJ = 150_C ID - Drain Current (mA) 1 C - Capacitance (pF) 80 120 VGS = 0 V f = 1 MHz Capacitance 60 25_C 0.1 40 C iss C oss 20 C rss 125_C 0.01 0.5 1.0 1.5 2.0 -55_C 0 0 10 20 30 40 50 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Gate Charge 15.0 I D = 1.0 A VGS - Gate-to-Source Voltage (V) 12.5 t - Switching Time (ns) VDS = 30 V 10.0 50 100 Load Condition Effects on Switching VDD = 25 V RG = 25 W VGS = 0 to 10 V 20 10 td(off) 5 tr td(on) 2 1 tf 7.5 48 V 5.0 2.5 0 0 100 200 300 400 500 600 Qg - Total Gate Charge (pC) 0.1 1 ID - Drain Current (A) 10 Normalized Effective Transient Thermal Impedance, Junction-to-Case (TO-205AD) 1.0 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJC = 20_C/W 3. TJM - TC = PDMZthJC(t) t1 t2 0.01 0.1 1.0 10 100 1K 10 K t1 - Square Wave Pulse Duration (sec) www.vishay.com 11-4 Document Number: 70222 S-04379--Rev. E, 16-Jul-01 This datasheet has been download from: www..com Datasheets for electronics components. |
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